Low-energy electron microscopy of nanoscale three-dimensional SiGe islands on Si(100)

被引：0

作者：

Sutter, P ^{[1
]}

Mateeva, E ^{[1
]}

Sullivan, JS ^{[1
]}

Lagally, MG ^{[1
]}

机构：

[1] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

来源：

THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES | 1999年 / 79卷

关键词：

epitaxial growth; three-dimensional SiGe islands; Si(100); low-energy electron microscopy;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Epitaxial growth of three-dimensional SiGe islands on Si(100) has been investigated by low-energy electron microscopy. Contrast mechanisms that allow measuring the evolution in position, size and shape of individual islands during deposition have been identified, and were used to study the epitasial embedding of faceted SiGe islands in a Si matrix. Deposition of Si onto SiGe islands drives their expansion and causes a change in their shape: the island apex decays and a (100) top facet forms. A physical interpretation of the mechanism producing this shape change is presented. The eventual smoothing of the growth front upon embedding of the islands is promoted by the strain-driven migration of adatoms away from the (100) top facet. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：262 / 270

页数：9

共 29 条

[1] DIFFRACTION DETERMINATION OF THE STRUCTURE OF METASTABLE 3-DIMENSIONAL CRYSTALS OF GE GROWN ON SI(001) [J].