Efficient Charge Injection in p-Type Polymer Field-Effect Transistors with Low-Cost Molybdenum Electrodes through V2O5 Interlayer

被引:35
作者
Baeg, Kang-Jun [2 ]
Bae, Gwang-Tae [1 ]
Noh, Yong-Young [1 ]
机构
[1] Dongguk Univ, Dept Energy & Mat Engn, Seoul 100715, South Korea
[2] KERI, Nano Carbon Mat Res Grp, Chang Won 642120, Gyeongsangnam D, South Korea
基金
新加坡国家研究基金会;
关键词
organic field-effect transistors; vanadium pentoxide; contact resistance; interlayer; molybdenum; low-cost electrode; HOLE TRANSPORT LAYERS; THIN-FILM; HIGH-MOBILITY; OXIDE; AMBIPOLAR; CONTACT; METAL; XPS; SEMICONDUCTOR; ANODE;
D O I
10.1021/am401375c
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Here we report high-performance polymer OFETs with a low-cost Mo source/drain electrode by efficient charge injection through the formation of a thermally deposited V2O5 thin film interlayer. A thermally deposited V2O5 interlayer is formed between a regioregular poly(3-hexylthiophene) (rr-P3HT) or a p-type polymer semiconductor containing dodecyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and the Mo source/drain electrode. The P3HT or PC12TV12T OFETs with the bare Mo electrode exhibited lower charge carrier mobility than those with Au owing to a large barrier height for hole injection (0.5-1.0 eV). By forming the V2O5 layer, the P3HT or PC12TV12T OFETs with V2O5 on the Mo electrode exhibited charge carrier mobility comparable to that of a pristine Au electrode. Best P3HT or PC12TV12T OFETs with 5 nm thick V2O5 on Mo electrode show the charge carrier mobility of 0.12 and 0.38 cm(2)/(V s), respectively. Ultraviolet photoelectron spectroscopy results exhibited the work-function of the Mo electrode progressively changed from 4.3 to 4.9 eV with an increase in V2O5 thickness from 0 to 5 nm, respectively. Interestingly, the V2O5-deposited Mo exhibits comparable R-c to Au, which mainly results from the decreased barrier height for hole carrier injection from the low-cost metal electrode to the frontier molecular orbital of the p-type polymer semiconductor after the incorporation of the transition metal oxide hole injection layer, such as V2O5. This enables the development of large-area, low-cost electronics with the Mo electrodes and V2O5 interlayer.
引用
收藏
页码:5804 / 5810
页数:7
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