Investigation on non-polar m-plane ZnO and Na-doped p-type ZnO films grown by plasma-assisted molecular beam epitaxy

被引：8

作者：

Chen, W. ^{[1
]}

Pan, X. H. ^{[1
]}

Chen, S. S. ^{[1
]}

He, H. P. ^{[1
]}

Huang, J. Y. ^{[1
]}

Lu, B. ^{[1
]}

Ye, Z. Z. ^{[1
]}

机构：

[1] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 121卷 / 01期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; OPTICAL-PROPERTIES; ZINC-OXIDE; PHOTOLUMINESCENCE; TEMPERATURE; EMISSION; NANORODS;

D O I：

10.1007/s00339-015-9385-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Non-polar ZnO and Na-doped ZnO films were epitaxially grown on m-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films exhibit dominant () (m-plane) orientation as identified by the X-ray diffraction pattern. The quality of the obtained m-plane ZnO film is evidenced by X-ray diffraction rocking curves full width at half maximum of 1125 arcsec for the () reflection and 1427 arcsec for the () reflection, respectively. Hall-effect measurements show that the m-plane Na-doped ZnO film exhibits p-type conductivity with a hole concentration of 2.50 x 10(17) cm(-3), while the m-plane ZnO film exhibits compensatory conductivity. Na atoms substituting for Zn atoms are believed to be the origin of p-type conductivity. The Na-related acceptor level is deduced to be 120 meV by temperature-dependent photoluminescence, indicating the superiority of m-plane ZnO film in p-type doping compared with the polar ZnO film.

引用

页码：77 / 82

页数：6

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