Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors

被引：10

作者：

Mukherjee, Shubhajit ^{[1
]}

Puzyrev, Yevgeny ^{[1
]}

Hinckley, John ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Singh, Jasprit ^{[1
]}

Pantelides, Sokrates T. ^{[1
]}

机构：

[1] Vanderbilt Univ, Interdisciplinary Program Mat Sci, Nashville, TN 37212 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5 | 2013年 / 10卷 / 05期

关键词：

HEMT; AlGaN/GaN; hot carrier effects; Monte-Carlo analysis; RELIABILITY;

D O I：

10.1002/pssc.201200620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impacts of gate bias and device temperature on carrier energy distributions are reported for AlGaN/GaN High Electron Mobility Transistors. The lateral electric field and the average carrier energy are the highest at the end of gate on the gate-drain access side. The number of high energy carriers is the greatest in the semi-ON operating condition, with maximum energies exceeding the activation energy of defects in the AlGaN. There is a significant decrease in the number of very high energy carriers (greater than 2 eV) as the device temperature increases whereas the number of moderately energetic carriers (between 1 to 2 eV) is higher at elevated temperatures. [GRAPHICS] (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：794 / 798

页数：5

共 13 条

[1] [Anonymous], 2007, SYNOPSYS SENTAURUS D, P561
[2] Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
Hodges, C.
Killat, N.
Kaun, S. W.
Wong, M. H.
Gao, F.
Palacios, T.
Mishra, U. K.
Speck, J. S.
Wolverson, D.
Kuball, M.
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (11)
[3] A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
Joh, Jungwoo
Gao, Feng
Palacios, Tomas
del Alamo, Jesus A.
[J]. MICROELECTRONICS RELIABILITY, 2010, 50 (06) : 767 - 773
[4] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G
Furthmuller, J
[J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11169 - 11186
[5] Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
Meneghesso, Gaudenzio
Verzellesi, Giovanni
Danesin, Francesca
Rampazzo, Fabiana
Zanon, Franco
Tazzoli, Augusto
Meneghini, Matteo
Zanoni, Enrico
[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (02) : 332 - 343
[6] Meneghini M., 2012, IEEE IRPS
[7] Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method
Meneghini, Matteo
Ronchi, Nicolo
Stocco, Antonio
Meneghesso, Gaudenzio
Mishra, Umesh K.
Pei, Yi
Zanoni, Enrico
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) : 2996 - 3003
[8] QUANTUM AND THERMAL EFFECTS IN H-2 DISSOCIATIVE ADSORPTION - EVALUATION OF FREE-ENERGY BARRIERS IN MULTIDIMENSIONAL QUANTUM-SYSTEMS
MILLS, G
JONSSON, H
[J]. PHYSICAL REVIEW LETTERS, 1994, 72 (07) : 1124 - 1127
[9] Reliability of III-V devices - The defects that cause the trouble
Pantelides, Sokrates T.
Puzyrev, Yevgeniy
Shen, Xiao
Roy, Tania
DasGupta, Sandeepan
Tuttle, Blair R.
Fleetwood, Daniel M.
Schrimpf, Ronald D.
[J]. MICROELECTRONIC ENGINEERING, 2012, 90 : 3 - 8
[10] Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
Puzyrev, Y. S.
Roy, T.
Beck, M.
Tuttle, B. R.
Schrimpf, R. D.
Fleetwood, D. M.
Pantelides, S. T.
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (03)

← 1 2 →