Effect of growth parameters on single crystal diamond deposition by DC Arc Plasma Jet CVD

被引：3

作者：

Hei, Lifu ^{[1
]}

Liu, Jie ^{[1
]}

Lu, Fanxiu ^{[1
]}

Li, Chengming ^{[1
]}

Song, Jianhua ^{[1
]}

Chen, Guangchao ^{[2
]}

机构：

[1] Univ Sci & Technol Beijing, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

MECHATRONICS AND INTELLIGENT MATERIALS II, PTS 1-6 | 2012年 / 490-495卷

关键词：

Single crystal diamond; CVD; Morphology; Growth rate; IMPURITY BLOCKING; LARGE-AREA;

D O I：

10.4028/www.scientific.net/AMR.490-495.3094

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Homoepitaxial diamond layers were grown on commercial 3.5 x 3.5 x 1.2 mm(3) HPHT synthetic type Ib (100) single crystal diamond plates using a DC Arc Plasma Jet CVD operating at gas recycling mode. The effects of substrate temperature and CH4/H-2 ratio on the surface morphology, the growth rate and the quality of the synthesized diamond have been studied using optical microscopy and Raman spectroscopy. With no intentional nitrogen added, the growth rate up to 12.3 mu m/h has been obtained in the single crystal diamond sample deposited at 1000 degrees C with CH4/H-2=0.625%, exhibiting relatively smooth surface morphology without any growth hillocks nor non-epitaxial crystallites, and presenting the typical feature of the epitaxial step-flow growth. The full width at half maximum (FWHM) of the Raman spectra was 2.08 cm(-1), which was close to that of the natural type Ha single crystal diamond.

引用

页码：3094 / +

页数：2

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