Influence of the direction of spontaneous orientation polarization on the charge injection properties of organic light-emitting diodes

被引：69

作者：

Noguchi, Yutaka ^{[1
,2
]}

Lim, Hyunsoo ^{[2
]}

Isoshima, Takashi ^{[3
]}

Ito, Eisuke ^{[3
]}

Hara, Masahiko ^{[3
]}

Chin, Whee Won ^{[4
]}

Han, Jin Wook ^{[4
]}

Kinjo, Hiroumi ^{[2
]}

Ozawa, Yusuke ^{[2
]}

Nakayama, Yasuo ^{[1
]}

Ishii, Hisao ^{[1
,2
]}

机构：

[1] Chiba Univ, Ctr Frontier Sci, Inage Ku, Chiba 2638522, Japan

[2] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan

[3] RIKEN Adv Sci Inst, Fluctoorder Funct Res Team, RIKEN HYU Collaborat Res Ctr, Wako, Saitama 3510198, Japan

[4] Hanyang Univ, Dept Chem, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 20期

关键词：

ELECTRONIC-STRUCTURES; METAL; ACCUMULATION; BEHAVIOR; ALQ(3); DEVICE;

D O I：

10.1063/1.4807797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A tris(7-propyl-8-hydroxyquinolinato) aluminum [Al(7-Prq)(3)] film shows negative giant surface potential (GSP) because of spontaneous orientation polarization. The polarity of this film is opposite to those of tris-(8-hydroxyquinolate) aluminum films. In Al(7-Prq)(3)-based organic light-emitting diodes, negative GSP leads to the positive interface charge and governs the electron injection and accumulation properties. In addition, a high resistance to the electron injection at the Al(7-Prq)(3)/Ca interface is suggested possibly because of the negative polarization charge at the interface. These results show the importance of orientation polarization in controlling the charge injection and accumulation properties and potential profile of the resultant devices. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 28 条

[1] Device physics of organic light-emitting diodes based on molecular materials [J].

Bruetting, Wolfgang ;

Berleb, Stefan ;

Mueckl, Anton G. .

ORGANIC ELECTRONICS, 2001, 2 (01) :1-36

[2] ORGANIC ELECTROLUMINESCENT DEVICES WITH 8-HYDROXYQUINOLINE DERIVATIVE-METAL COMPLEXES AS AN EMITTER [J].

HAMADA, Y ;

SANO, T ;

FUJITA, M ;

FUJII, T ;

NISHIO, Y ;

SHIBATA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4A) :L514-L515

[3]

Han J. W., ORG ELECT

[4] Charge-induced luminescence quenching in organic light-emitting diodes [J].

Haskins, T ;

Chowdhury, A ;

Young, RH ;

Lenhard, JR ;

Marchetti, AP ;

Rothberg, LJ .

CHEMISTRY OF MATERIALS, 2004, 16 (23) :4675-4680

[5]

Hayashi N., 2004, P INT S SUP FUNCT OR, P69

[6]

Ishii H, 1999, ADV MATER, V11, P605, DOI 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO

[7]

2-Q

[8] Spontaneous buildup of giant surface potential by vacuum deposition of Alq3 and its removal by visible light irradiation [J].

Ito, E ;

Washizu, Y ;

Hayashi, N ;

Ishii, H ;

Matsuie, N ;

Tsuboi, K ;

Ouchi, Y ;

Harima, Y ;

Yamashita, K ;

Seki, K .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7306-7310

[9]

Kajimoto N., 2008, THESIS TOKYO I TECHN

[10] Nonradiative recombination centers and electrical aging of organic light-emitting diodes: Direct connection between accumulation of trapped charge and luminance loss [J].

Kondakov, DY ;

Sandifer, JR ;

Tang, CW ;

Young, RH .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) :1108-1119

← 1 2 3 →