Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1-xGex crystals

被引：8
作者：
Smirnova, OV
Kalaev, VV
Makarov, YN
Abrosimov, NV
Riemann, H
机构：
[1] STR GmbH, D-91002 Erlangen, Germany
[2] Soft Impact Ltd, St Petersburg 194156, Russia
[3] Inst Crystal Growth, D-12489 Berlin, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 287卷 / 02期
关键词：
computer simulation; turbulent convection; Czochralski method; Si1-xGex;
D O I：
10.1016/j.jcrysgro.2005.11.034
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Crucible rotation effect on crystallization rate behavior during CZ Si1-xGex growth has been numerically studied for several crystal positions of the growth, including the initial and final stages. It has been shown that the melt flow structures strongly differ at various crucible rotation rates and at decreasing the melt depth, which results in quite specific behavior of crystallization characteristics. The computations explained physical reasons of experimentally observed unstable crystal growth at the stage of upper cone formation. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：281 / 286
页数：6
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