Scanning Photoemission Microscopy of Graphene Sheets on SiO2

被引：40
作者：
Kim, Ki-Jeong [1 ,2 ,3 ]
Lee, Hangil [3 ]
Choi, Jae-Hyun [4 ]
Youn, Young-Sang [1 ,2 ]
Choi, Junghun [1 ,2 ]
Lee, Hankoo [4 ]
Kang, Tai-Hee [3 ]
Jung, M. C. [3 ]
Shin, H. J. [3 ]
Lee, Hu-Jong [4 ]
Kim, Sehun [1 ,2 ]
Kim, Bongsoo [3 ,4 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea
[3] POSTECH, Pohang Accelerator Lab, Pohang 790784, Kyungbuk, South Korea
[4] POSTECH, Dept Phys, Pohang 790784, Kyungbuk, South Korea
来源：
ADVANCED MATERIALS | 2008年 / 20卷 / 19期
关键词：
D O I：
10.1002/adma.200800742
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Scanning photoemission microscopy (SPEM) images of a graphene flake as well as the C Is core level spectra for the mono- and multilayer graphene are measured. The samples with lateral dimensions on the micrometer scale are prepared on a SiO2 surface by direct exfoliation of crystalline graphite. Monolayer graphene is distinguished from the multilayer graphenes through the chemical contrast images of SPEM.
引用
收藏
页码：3589 / +
页数：4
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