A W-Band InGaAs PIN-MMIC Digital Phase-Shifter Using a Switched Transmission-Line Structure

被引：0
作者：
Yang, Jung Gil [1 ]
Lee, Jooseok [1 ]
Yang, Kyounghoon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
来源：
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年
关键词：
W-band; InGaAs; PIN-diode; MMIC; phase shifter;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the design and fabrication of a W-band InGaAs PIN-diode MMIC 4-bit phase shifter based on a switched delay line. In order to achieve low insertion loss and good phase shifting characteristics at W-band, the topology based on a switched delay-line is employed using a thin-film microstrip line structure. The fabricated phase shifter has demonstrated good performances such as an insertion loss less than 12.7 dB at a frequency range of 81 to 85 GHz with an intrinsic chip size of 1.93 x 0.80 mm(2). To our knowledge, this is the first InGaAs PIN MMIC digital phase shifter demonstrated up to W-band.
引用
收藏
页码：99 / 101
页数：3
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