Electronic structure of sol-gel derived SnO2 thin films

被引:15
作者
Senguttuvan, TD
Malhotra, LK
机构
[1] Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110 016, Hauz Khas
关键词
oxides; thin films; sol-gel growth; optical growth;
D O I
10.1016/S0022-3697(96)00113-8
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ellipsometric measurements on sol gel derived tin dioxide thin films coated onto various substrates (Quartz, Corning 7059, Float glass, Alumina and Silicon) have been carried out at air ambient. The imaginary parts of dielectric spectra have been analyzed and compared with various theoretically calculated electronic transitions reported in the literature in order to infer the electronic structure of these films. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码:19 / 24
页数:6
相关论文
共 23 条
[1]   SPECTROSCOPIC PROPERTIES OF SEMICONDUCTOR CRYSTALS WITH DIRECT FORBIDDEN ENERGY-GAP [J].
AGEKYAN, VT .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01) :11-42
[2]   ENERGY-BANDS IN STANNIC OXIDE (SNO2) [J].
ARLINGHAUS, FJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (08) :931-935
[3]  
CHALETON JP, 1994, THIN SOLID FILMS, V247, P162
[4]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46
[5]  
EAGNER CD, 1978, HDB XRAY PHOTON SPEC, P118
[6]  
FURUSAKI T, 1993, NIPPON SERAM KYO GAK, V101, P451, DOI 10.2109/jcersj.101.451
[7]   BAND-STRUCTURE AND OPTICAL-PROPERTIES OF INTRINSIC TETRAGONAL DIOXIDES OF GROUPS .4. ELEMENTS [J].
JACQUEMIN, JL ;
BORDURE, G .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1081-1087
[8]   ELECTRICAL-CONDUCTIVITY OF TIN OXIDE-FILMS PREPARED BY THE SOL-GEL METHOD [J].
MADDALENA, A ;
DALMASCHIO, R ;
DIRE, S ;
RACCANELLI, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 121 (1-3) :365-369
[9]  
MADOU MJ, 1989, CHEM SENSING SOLID S, P492
[10]  
MASAHIRO N, 1971, J PHYS SOC JPN, V30, P158