Annealing effect on the electrical properties and microstructure of embedded Ni-Cr thin film resistor

被引：28

作者：

Lai, Lifei ^{[1
,2
,3
]}

Zeng, Wenjin ^{[1
]}

Fu, Xianzhu ^{[1
]}

Sun, Rong ^{[1
]}

Du, Ruxu ^{[4
]}

机构：

[1] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] NingBo Univ Technol, Ningbo 315016, Zhejiang, Peoples R China

[4] Chinese Univ Hong Kong, Shatin, Hong Kong, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 538卷

基金：

中国国家自然科学基金;

关键词：

Annealing; Embedded thin film resistor; Temperature coefficient of resistance (TCR); Electrical properties; Microstructure; XPS; RESISTIVITY; BEHAVIOR; SI;

D O I：

10.1016/j.jallcom.2012.05.102

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ni-Cr (80/20 at.%) alloy was deposited on the copper foil substrate as embedded thin film resistor (ETFR) materials by DC magnetron sputtering method. Electrical properties and microstructure of Ni-Cr ETFR under different annealing conditions were investigated. Results indicated that the ETFR exhibited the smallest temperature coefficient of resistance (TCR) after annealing at 250 degrees C for 540 s in N-2. The structure, stress, composition and surface morphology of ETFR materials were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM). The rarely reported hexagonal Ni (011), (002) and (103) in Ni-Cr thin film were found in Ni-Cr (80/20 at.%) ETFR materials. The chemical states on the surface of the ETFR materials after annealing were mainly Cr2O3. The segregation of chromium during annealing can affect the resistivity and temperature coefficient of resistance (TCR). The different surface morphology of ETFR in annealing will affect the resistivity. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：125 / 130

页数：6

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