DESIGN AND SIMULATION FOR TRI-AXIAL PIEZORESISTIVE MEMS ACCELEROMETER

被引：0

作者：

Liu, Meng ^{[1
]}

Zhang, Wei ^{[1
]}

Hao, Yilong ^{[1
]}

机构：

[1] Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Inst Microelect, Beijing 100871, Peoples R China

来源：

MICRO-NANO TECHNOLOGY XIII | 2012年 / 503卷

关键词：

Piezoresistive accelerometer; FEA; Silicon; High-g force; SILICON;

D O I：

10.4028/www.scientific.net/KEM.503.312

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents analytical models for tri-axial accelerometer based on one seismic mass and eight beams. The model makes it possible to better understand and to predict the behavior of the accelerometer. The accelerometer discussed in this paper was designed to measure high g-forces in every single axis. We use finite element mechanics analysis and design for optimization of the device structure. FEA software ANSYS was used to simulate the behavior of the accelerometer when it was subjected to static high-g forces. The analytical results of simulation and theoretical demonstrate that the accelerometer we designed is feasible.

引用

页码：312 / 317

页数：6

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