Cu(In,Ga)Se2 thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

被引:7
作者
Haug, Veronika [1 ]
Klugius, Ines [1 ]
Friedlmeier, Theresa Magorian [1 ]
Quintilla, Aina [1 ]
Ahlswede, Erik [1 ]
机构
[1] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany
来源
JOURNAL OF PHOTONICS FOR ENERGY | 2011年 / 1卷
关键词
photovoltaics; solar cells; Cu(In; Ga)Se-2; thin film; sputtering; selenization; ternary target; GA; MODULES; TARGET; H2SE;
D O I
10.1117/1.3659500
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-efficiency thin-film solar cells based on Cu(In,Ga)Se-2 are often formed by depositing precursor films and using a subsequent selenization step. We demonstrate a simple and cost-efficient approach simplifying both process steps by using a ternary Cu-In-Ga alloy target for sputter deposition of the precursor layer and by using a simple nonvacuum selenization reaction based on elemental selenium. In this contribution we examine in detail the characteristics of the precursor layers. The sputter growth is governed by a segregation of In-rich islands on top of a closed Cu-rich base. With optimized layers we could achieve conversion efficiencies well above 13% without the use of antireflective coating or metallic grids. The influence of the selenization duration on morphology and performance is discussed. (c) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3659500]
引用
收藏
页数:7
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