Cu(In,Ga)Se2 thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step

被引：7

作者：

Haug, Veronika ^{[1
]}

Klugius, Ines ^{[1
]}

Friedlmeier, Theresa Magorian ^{[1
]}

Quintilla, Aina ^{[1
]}

Ahlswede, Erik ^{[1
]}

机构：

[1] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany

来源：

JOURNAL OF PHOTONICS FOR ENERGY | 2011年 / 1卷

关键词：

photovoltaics; solar cells; Cu(In; Ga)Se-2; thin film; sputtering; selenization; ternary target; GA; MODULES; TARGET; H2SE;

D O I：

10.1117/1.3659500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-efficiency thin-film solar cells based on Cu(In,Ga)Se-2 are often formed by depositing precursor films and using a subsequent selenization step. We demonstrate a simple and cost-efficient approach simplifying both process steps by using a ternary Cu-In-Ga alloy target for sputter deposition of the precursor layer and by using a simple nonvacuum selenization reaction based on elemental selenium. In this contribution we examine in detail the characteristics of the precursor layers. The sputter growth is governed by a segregation of In-rich islands on top of a closed Cu-rich base. With optimized layers we could achieve conversion efficiencies well above 13% without the use of antireflective coating or metallic grids. The influence of the selenization duration on morphology and performance is discussed. (c) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3659500]

引用

页数：7

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