Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

被引：0

作者：

O'Connor, Ian ^{[1
]}

Cantan, Mayeul ^{[1
]}

Marchand, Cedric ^{[1
]}

Vilquin, Bertrand ^{[1
]}

Slesazeck, Stefan ^{[2
]}

Breyer, Evelyn T. ^{[2
]}

Mulaosmanovic, Halid ^{[2
]}

Mikolajick, Thomas ^{[2
,3
]}

Giraud, Bastien ^{[4
]}

Noel, Jean-Philippe ^{[4
]}

Ionescu, Adrian ^{[5
]}

Stolichnov, Igor ^{[5
]}

机构：

[1] Univ Lyon, Ecole Cent Lyon, CNRS, Lyon Inst Nanotechnol, Ecully, France

[2] NaMLab GmbH, Dresden, Germany

[3] Tech Univ Dresden, Chair Nanoel Mat, Dresden, Germany

[4] Univ Grenoble Alpes, CEA, LETI, MINATEC Campus, Grenoble, France

[5] Ecole Polytech Fed Lausanne, Nanolab, Lausanne, Switzerland

来源：

PROCEEDINGS OF THE 2018 26TH IFIP/IEEE INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION (VLSI-SOC) | 2018年

基金：

欧盟地平线“2020”;

关键词：

ferroelectric devices; non-volatile memory; steep slope switch; low-power logic; logic-in-memory;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy-efficiency and allow flexibility for finer grain logic and memory. This paper will describe the basics of ferroelectric devices for both hysteretic (non-volatile memory) and negative capacitance (steep slope switch) devices, and then project how these can be used in low-power logic cell architectures and fine-grain logic-in-memory (LiM) circuits.

引用

页码：180 / 183

页数：4

共 24 条

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