Intersubband electron scattering rates in one-dimensional Si MOS-structure

被引：0
|
作者：
Borzdov, VM [1 ]
Galenchik, VO [1 ]
Zhevnyak, OG [1 ]
Komarov, FF [1 ]
机构：
[1] Belarusian State Univ, Dept Radio Phys & Elect, Minsk 220064, BELARUS
来源：
PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001 | 2001年
关键词：
D O I：
10.1142/9789812810076_0083
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The intersubband electron scattering rates in one-dimensional Si MOS-structure are calculated. The results obtained are in a good agreement with known theoretical insight.
引用
收藏
页码：470 / 472
页数：3
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