AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation

被引:33
作者
Deen, David [1 ]
Storm, David [1 ]
Meyer, David [1 ]
Katzer, D. Scott [1 ]
Bass, Robert [1 ]
Binari, Steven [1 ]
Gougousi, Theodosia [2 ]
机构
[1] USN, Res Lab, Div Elect Sci & Technol, 4555 Overlook Ave, Washington, DC 20375 USA
[2] Univ Maryland Baltimore Cty, Dept Phys, Baltimore, MD 21250 USA
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期
基金
美国国家科学基金会;
关键词
HEMT; atomic layer deposition; Ta2O5; HfO2;
D O I
10.1002/pssc.201001071
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (HEMTs) have been grown and fabricated which utilize a 6 nm thick atomic layer deposited film of either Ta2O5 or HfO2 for gate insulation. Drain, transfer, and gate current characteristics are compared between both structures, showing a measurable difference in threshold voltage and transconductance. The cause is highlighted by the results of capacitance-voltage analysis which showed 10 MHz dielectric constants of 8.7 and 11.7 for the HfO2 and Ta2O5 films, respectively. Furthermore, interface trap state density was extracted by Terman's method and compared between films. HEMT small signal frequency performance was representative of the different sub-micron gate lengths. Consideration of the compared electrical results suggests that at this stage in ALD development, Ta2O5 appears better suited for gate insulation of AlN/GaN HEMTs. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:2420 / 2423
页数:4
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