Detection of a Large Valley-Orbit Splitting in Silicon with Two-Donor Spectroscopy

被引：48

作者：

Roche, B. ^{[1
]}

Dupont-Ferrier, E. ^{[1
]}

Voisin, B. ^{[1
]}

Cobian, M. ^{[2
]}

Jehl, X. ^{[1
]}

Wacquez, R. ^{[1
,3
]}

Vinet, M. ^{[3
]}

Niquet, Y-M ^{[2
]}

Sanquer, M. ^{[1
]}

机构：

[1] UJF Grenoble 1, SPSMS, UMR E CEA, INAC, F-38054 Grenoble, France

[2] UJF Grenoble 1, SPMM, UMR E CEA, INAC, F-38054 Grenoble, France

[3] CEA, LETI, F-38054 Grenoble, France

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.108.206812

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nano-structures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO2 interface and electric field in the wire show that the values found are consistent with the device geometry.

引用

页数：5

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