Regularities of remote plasma enhanced chemical vapor deposition of silicon nitride films

被引：0
|
作者：
Alexandrov, S. E. [1 ]
机构：
[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
来源：
RUSSIAN JOURNAL OF GENERAL CHEMISTRY | 2015年 / 85卷 / 05期
关键词：
DILUTING NITROGEN; EMISSION-SPECTROSCOPY; ARGON; CVD; TEMPERATURE; PARAMETERS; LAYERS;
D O I：
10.1134/S1070363215050412
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Specific features of remote plasma enhanced chemical vapor deposition processes with inductive and capacitive coupling of power have been analyzed. Experimental results from a study of the physical and chemical regularities of those processes have been considered. Influence of diluting nitrogen with noble gases on growth rate and composition of the deposited films has been discussed. Essential role of argon diluting providing a high concentration of atomic nitrogen in the reacting gas phase required for plasma chemical synthesis of nitride films was demonstrated. Possible approaches to further improvement of plasma enhanced chemical deposition processes have been proposed.
引用
收藏
页码：1238 / 1251
页数：14
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