Band tailing and efficiency limitation in kesterite solar cells

被引：582

作者：

Gokmen, Tayfun ^{[1
]}

Gunawan, Oki ^{[1
]}

Todorov, Teodor K. ^{[1
]}

Mitzi, David B. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 10期

关键词：

VOLTAGE;

D O I：

10.1063/1.4820250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that a fundamental performance bottleneck for hydrazine processed kesterite Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells with efficiencies reaching above 11% can be the formation of band-edge tail states, which quantum efficiency and photoluminescence data indicate is roughly twice as severe as in higher-performing Cu(In,Ga)(S,Se)(2) devices. Low temperature time-resolved photoluminescence data suggest that the enhanced tailing arises primarily from electrostatic potential fluctuations induced by strong compensation and facilitated by a lower CZTSSe dielectric constant. We discuss the implications of the band tails for the voltage deficit in these devices. (C) 2013 AIP Publishing LLC.

引用

页数：5

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