Hybrid GaAs/AlGaAs Nanowire-Quantum dot System for Single Photon Sources

被引：11

作者：

Cirlin, G. E. ^{[1
,2
,3
,4
]}

Reznik, R. R. ^{[1
,2
,3
,4
]}

Shtrom, I. V. ^{[1
,3
]}

Khrebtov, A. I. ^{[1
,2
]}

Samsonenko, Yu. B. ^{[1
,2
,3
]}

Kukushkin, S. A. ^{[5
]}

Kasama, T. ^{[6
]}

Akopian, N. ^{[6
]}

Leonardo, L. ^{[6
]}

机构：

[1] St Petersburg Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

[2] ITMO Univ, St Petersburg 197101, Russia

[3] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[4] Peter Great Polytech Univ, St Petersburg 195251, Russia

[5] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia

[6] Tech Univ Denmark, DTU Photon, DK-2800 Lyngby, Denmark

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 04期

基金：

俄罗斯科学基金会;

关键词：

GROWTH;

D O I：

10.1134/S1063782618040103

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

III-V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

引用

页码：462 / 464

页数：3

共 7 条

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