Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE

被引：0

作者：

Steffens, Michael ^{[1
]}

Hoeffgen, Stefan K. ^{[1
]}

Poizat, Marc ^{[2
]}

机构：

[1] Fraunhofer Inst Technol Trendanal INT, D-53879 Euskirchen, Germany

[2] European Space Agcy, Estec, NL-2200 AG Noordwijk, Netherlands

来源：

2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2017年

关键词：

Radiation effects; Total ionizing dose; ELDRS; Bipolar transistors; Silicon carbide; SiC; SiC Schottky diodes; SiC MOSFETs; SiC JFET;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present radiation tests performed on Power bipolar transistors, which evaluated concerning their ELDRS sensitivity to TID levels up to 200 krad(Si) with Co60. Additionally a selection of commercial SiC power devices are tested with Co60 at high dose rates to TID levels of 1 Mrad(Si).

引用

页码：413 / 417

页数：5

共 7 条

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[7] Neudeck, VLSI HDB

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