H2S gas sensing properties of nanocrystalline Cu-doped ZnO thin films prepared by advanced spray pyrolysis

被引:93
|
作者
Shewale, P. S. [1 ]
Patil, V. B. [2 ]
Shin, S. W. [3 ]
Kim, J. H. [3 ]
Uplane, M. D. [1 ]
机构
[1] Shivaji Univ, Thin Film Phys Lab, Dept Elect, Kolhapur 416004, Maharashtra, India
[2] Solapur Univ, Sch Phys Sci, Solapur 413255, MS, India
[3] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
关键词
ZnO; Thin films; Cu doping; Advanced spray pyrolysis; H2S sensing; SENSITIVITY; SENSOR; FABRICATION; DEPOSITION; WO3;
D O I
10.1016/j.snb.2013.05.073
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The ZnO-based thin films doped with 1-4wt% Cu were deposited on the glass substrates using the advanced spray pyrolysis technique. All films are deposited at 473 K. The crystallinity and morphology of the films were characterized by XRD, TEM and FE-SEM respectively. The structural analyses of the films indicate that they are polycrystalline and have a hexagonal wurtzite structure; however Cu doping enhances the preferential orientation along the 100 2]. The energy dispersive X-ray spectroscopic analysis (EDX) confirmed an enhancement in the amount of Cu in the film with increase in the copper concentration in the starting solution. The sensor response was estimated by the change in the electrical conductance of the film in the absence and presence of H2S gas. The sensor response and selectivity in relation to, operation temperature, Cu doping concentration and the gas concentration has been systematically studied. A significant response (similar to 0.38) towards 20 ppm H2S at 523 K operating temperature is observed for the 4 wt% Cu-doped ZnO. The Pd-sensitized 4 wt% Cu doped ZnO film exhibits improved sensing characteristics with good stability. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:226 / 234
页数:9
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