共 50 条
- [44] Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3, 2013, 58 (04): : 71 - 80
- [47] Gate Voltage Dependence of Channel Length Modulation for InGaAs n-channel MOSFETs 2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2014,
- [50] Radiation Assessment of Two Automotive-Grade N-Channel MOSFETs 2022 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) (IN CONJUNCTION WITH 2022 NSREC), 2022, : 124 - 127