Growth, Microstructures, and Optoelectronic Properties of Epitaxial BaSn1-xSbxO3-δ Thin Films by Chemical Solution Deposition

被引：18

作者：

Wei, Renhuai ^{[1
]}

Tang, Xianwu ^{[1
]}

Hu, Ling ^{[1
]}

Luo, Xuan ^{[1
]}

Yang, Jie ^{[1
]}

Song, Wenhai ^{[1
]}

Dai, Jianming ^{[1
]}

Zhu, Xuebin ^{[1
]}

Sun, Yuping ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China

[2] Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China

[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

ACS APPLIED ENERGY MATERIALS | 2018年 / 1卷 / 04期

基金：

中国国家自然科学基金;

关键词：

growth mechanism; chemical solution deposition; transparent conducting oxide; thin film; perovskite; BaSnO3; TRANSPARENT; BASNO3; TRANSISTORS; TIN;

D O I：

10.1021/acsaem.8b00003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial thin films of perovskite BaSn1-xSbxO3-delta are fabricated by a simple chemical solution deposition method, and the relationship among the processing, the microstructure, and the optoelectronic property is systematically investigated. The process of multiple annealing combined with the postannealing under nitrogen ambient is the optimal procedure to fabricate high quality BaSnO3-delta thin films. Sb doping in Sn sites facilitates the epitaxial growth of the BaSnO3-delta grains. The Hall results show that with increasing Sb doping content the carrier density and the carrier mobility are enhanced and decreased, respectively, resulting in the highest room-temperature electrical conductivity of 260 S/cm in the BaSn0.91Sb0.09O3-delta thin film. It is confirmed that the ionized Sb5+ and oxygen vacancies are the main scattering sources for carrier transport in BaSn1-xSbxO3-delta thin films. The results will provide guidance for synthesis of BaSnO3-delta-based and other donor-doped perovskite transparent conducting large-area thin films with low cost.

引用

页码：1585 / 1593

页数：17

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