Low Noise-Figure P+ AA Mesh Inductors for CMOS UWB RFIC Applications

被引：9

作者：

Chen, Chi-Chen ^{[1
]}

Lee, Jen-How ^{[1
]}

Lin, Yo-Sheng ^{[1
]}

Chen, Chang-Zhi ^{[1
]}

Huang, Guo-Wei ^{[2
]}

Lu, Shey-Shi ^{[3
,4
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Puli 545, Taiwan

[2] Natl Nanodevice Labs, Hsinchu 300, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[4] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 12期

关键词：

AA mesh; CMOS; inductor; low-noise amplifier (LNA); noise figure (NF); ultrawideband (UWB);

D O I：

10.1109/TED.2008.2006537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrate that the noise figure (NF) of a P+ active-area (AA) mesh inductor is much better than that of its standard version. In a P(+)AA mesh inductor, the AA with P+ implantation is added beneath it in the shape of a mesh to reduce its capacitive and magnetic coupling with the silicon substrate. Two 3.1-10.6-GHz CMOS ultrawideband (UWB) low-noise amplifiers (LNAs), one with P+ AA mesh inductors (AA mesh UWB LNA) and the other with standard inductors (STD UWB LNA), are implemented to study the effect of the P+ AA mesh on their performances. The results show that a 0.62-dB improvement in NF (from 0.8 to 0.18 dB) was achieved at 10.5 GHz for the input inductor L-G1 if the P+ AA mesh had been added beneath it. In addition, the AA mesh UWB LNA achieved a low and flat NF of 3.365 +/- 0.225 dB over the band of interest, notably better than that (4.64 +/- 0.52 dB) of the STD UWB LNA.

引用

页码：3542 / 3548

页数：7

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