Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique

被引：13

作者：

Hong, Tae Eun ^{[1
]}

Choi, Sang-Kyung ^{[2
]}

Kim, Soo-Hyun ^{[2
]}

Cheon, Taehoon ^{[3
]}

机构：

[1] Korea Basic Sci Inst, Busan Ctr, Pusan 618230, South Korea

[2] Yeungnam Univ, Sch Mat Sci & Engn, Gyeongsangbuk Do 712749, South Korea

[3] Daegu Gyeongbuk Inst Sci & Technol, Ctr Core Res Facil, Dalseong Gun 711873, Daegu, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2013年 / 96卷 / 04期

关键词：

CHEMICAL-VAPOR-DEPOSITION; DIFFUSION BARRIER; TIN FILMS;

D O I：

10.1111/jace.12289

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

TiCx films were deposited by atomic layer deposition using tetrakisneopentyltitanium [Ti(CH2C(CH3)3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-saltstructured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was similar to 0.52 and the film resistivity was as low as similar to 600cm with a high density of 4.41g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25nm) with an aspect ratio of similar to 4.5.

引用

页码：1060 / 1062

页数：3

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