Investigation of GaBi1-xSbx based highly mismatched alloys: Potential thermoelectric materials for renewable energy devices and applications

被引:16
作者
AlFaify, S. [1 ]
Ul Haq, Bakhtiar [1 ]
Ahmed, R. [2 ,3 ]
Butt, Faheem K. [4 ,5 ]
Alsardia, M. M. [6 ]
机构
[1] King Khalid Univ, Fac Sci, Dept Phys, AFMOL, POB 9004, Abha, Saudi Arabia
[2] Univ Teknol Malaysia, Fac Sci, Dept Phys, Skudai 81310, Johor, Malaysia
[3] Univ Punjab, Ctr High Energy Phys, Quid E Azam Campus, Lahore, Pakistan
[4] Tech Univ Munich, Phys Dept ECS, Garching, Germany
[5] Univ Educ, Div Sci & Technol, Dept Phys, Coll Rd, Lahore, Pakistan
[6] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea
关键词
Density functional theory; Electronic band structure; Seebeck coefficients; Power factor; Figure of merit; BAND-STRUCTURE; TRANSPORT-PROPERTIES; SEMICONDUCTORS; COEFFICIENTS; PERFORMANCE; PARAMETERS; IMPACT; GROWTH; POWER; GA;
D O I
10.1016/j.jallcom.2017.12.306
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The high-performance thermoelectric materials are considered a potential resource for clean and sustainable energy. Highly mismatched alloys (HMAs), that are admired for the dramatic modifications in their electronic band structures can essentially play important role in developing high-performance thermoelectric materials. Here, we explore the potential of GaBi1-xSbx based HMAs for their thermoelectric applications via density functional theory coupled with the Boltzmann transport theory. To perform a comprehensive analysis, four different Sb alloying compositions such as GaBi, GaBi0.875Sb0.125, GaBi0.75Sb0.25, and GaBi0.625Sb0.375, are considered. It is found that the Sb replacement over Bi in GaBi1-xSbx has stimulated two major modifications in the electronic band structure: the band-gap enhancement, and contraction in the curvature of conduction band minimum. These features have remarkably evolved the thermoelectric properties of GaBi1-xSbx as a function of Sb contents. The significant increase in Seebeck coefficient and decrease in the electrical conductivity of GaBi1-xSbx alloy as a function of Sb content have resulted in large values of thermoelectric power factor as well as the figure of merit (ZT). Considerable improvement in the ZT values as a function of Sb has been recorded that approaches to similar to 1.0 for GaBi0.625Sb0.375 at room temperature. The occurrence of optimal thermoelectric coefficient values, at attainable doping levels below the Fermi level reveals the predominantly p-type nature of the GaBi1-xSbx. Hence, GaBi1-xSbx (GaBi0.625Sb0.375 in particular) exhibits interesting thermoelectric properties at room temperature, and is therefore believed to be good candidate material for room temperature based thermoelectric devices and applications. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:380 / 387
页数:8
相关论文
共 63 条
[1]   Pressure and composition dependence of structural, electronic and optical properties of GaAsBi alloys [J].
Alaya, R. ;
Mbarki, M. ;
Rebey, A. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 40 :925-930
[2]   Valence band anticrossing in GaBixAs1-x [J].
Alberi, K. ;
Dubon, O. D. ;
Walukiewicz, W. ;
Yu, K. M. ;
Bertulis, K. ;
Krotkus, A. .
APPLIED PHYSICS LETTERS, 2007, 91 (05)
[3]   Valence-band anticrossing in mismatched III-V semiconductor alloys [J].
Alberi, K. ;
Wu, J. ;
Walukiewicz, W. ;
Yu, K. M. ;
Dubon, O. D. ;
Watkins, S. P. ;
Wang, C. X. ;
Liu, X. ;
Cho, Y. -J. ;
Furdyna, J. .
PHYSICAL REVIEW B, 2007, 75 (04)
[4]   Modified Becke-Johnson (mBJ) exchange potential investigations of the optoelectronic structure of the quaternary diamond-like semiconductors Li2CdGeS4 and Li2CdSnS4 [J].
Azam, Sikander ;
Khan, Saleem Ayaz ;
Goumri-Said, Souraya .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 39 :606-613
[5]   Structural and electronic properties of GaN x As1-x alloys [J].
Baaziz, H. ;
Charifi, Z. ;
Reshak, Ali Hussain ;
Hamad, B. ;
Al-Douri, Y. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2012, 106 (03) :687-696
[6]   Cooling, heating, generating power, and recovering waste heat with thermoelectric systems [J].
Bell, Lon E. .
SCIENCE, 2008, 321 (5895) :1457-1461
[7]  
Bernardin F, 2002, PHYS STATUS SOLIDI A, V190, P65, DOI 10.1002/1521-396X(200203)190:1<65::AID-PSSA65>3.0.CO
[8]  
2-0
[9]  
Blaha P., 2001, An Augmented Plane Wave+Local Orbitals Program for Calculating Crystal Properties
[10]   Thermoelectric and piezoelectric properties of the predicted AlxIn1-xN composites based on ab initio calculations [J].
Chang, Yee Hui Robin ;
Yoon, Tiem Leong ;
Lim, Thong Leng ;
Tuh, Moi Hua ;
Goh, Eong Sheng .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (36) :24613-24625