Disorder effects in topological states: Brief review of the recent developments

被引:29
作者
Wu, Binglan [1 ]
Song, Juntao [2 ]
Zhou, Jiaojiao [1 ]
Jiang, Hua [1 ]
机构
[1] Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Peoples R China
[2] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei, Peoples R China
基金
中国国家自然科学基金;
关键词
topological states; disorder effects; topological Anderson insulator; metal-insulator transition; CONDENSED-MATTER; INSULATOR PHASE; SCALING THEORY; QUANTUM; ABSENCE; LOCALIZATION; CONDUCTANCE; TRANSITION; DISCOVERY; DIFFUSION;
D O I
10.1088/1674-1056/25/11/117311
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Disorder inevitably exists in realistic samples, manifesting itself in various exotic properties for the topological states. In this paper, we summarize and briefly review the work completed over the last few years, including our own, regarding recent developments in several topics about disorder effects in topological states. For weak disorder, the robustness of topological states is demonstrated, especially for both quantum spin Hall states with Z(2) = 1 and size induced nontrivial topological insulators with Z(2) = 0. For moderate disorder, by increasing the randomness of both the impurity distribution and the impurity induced potential, the topological insulator states can be created from normal metallic or insulating states. These phenomena and their mechanisms are summarized. For strong disorder, the disorder causes a metal-insulator transition. Due to their topological nature, the phase diagrams are much richer in topological state systems. Finally, the trends in these areas of disorder research are discussed.
引用
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页数:12
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