Photochemical deposition of a p-type transparent alloy semiconductor CuxZnyS

被引：24

作者：

Dula, Man ^{[1
]}

Yang, Kai ^{[1
]}

Ichimura, Masaya ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 12期

关键词：

CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; AQUEOUS-SOLUTIONS; OXIDE-FILMS; GROWTH; CONDUCTION; GAN; FABRICATION; DEVICES; CUXS;

D O I：

10.1088/0268-1242/27/12/125007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of new alloy semiconductor CuxZnyS are fabricated by the photochemical deposition (PCD) method. In PCD, sulfide is formed owing to reactions activated by ultraviolet radiation in a solution. CuxZnyS films with a bandgap between 2.5-3.7 eV are deposited from an aqueous solution containing CuSO4, ZnSO4 and Na2S2O3, and influences of various deposition parameters on film composition and bandgap are investigated. The film with a bandgap larger than 3 eV shows high optical transmission (70-80%) in the visible region. P-type conduction and photosensitivity are confirmed by the photoelectrochemical measurement.

引用

页数：5

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