Photochemical deposition of a p-type transparent alloy semiconductor CuxZnyS

被引：24

作者：

Dula, Man ^{[1
]}

Yang, Kai ^{[1
]}

Ichimura, Masaya ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 12期

关键词：

CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; AQUEOUS-SOLUTIONS; OXIDE-FILMS; GROWTH; CONDUCTION; GAN; FABRICATION; DEVICES; CUXS;

D O I：

10.1088/0268-1242/27/12/125007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of new alloy semiconductor CuxZnyS are fabricated by the photochemical deposition (PCD) method. In PCD, sulfide is formed owing to reactions activated by ultraviolet radiation in a solution. CuxZnyS films with a bandgap between 2.5-3.7 eV are deposited from an aqueous solution containing CuSO4, ZnSO4 and Na2S2O3, and influences of various deposition parameters on film composition and bandgap are investigated. The film with a bandgap larger than 3 eV shows high optical transmission (70-80%) in the visible region. P-type conduction and photosensitivity are confirmed by the photoelectrochemical measurement.

引用

页数：5

共 26 条

[11] P-type electrical conduction in transparent thin films of CuAlO2 [J].

Kawazoe, H ;

Yasukawa, M ;

Hyodo, H ;

Kurita, M ;

Yanagi, H ;

Hosono, H .

NATURE, 1997, 389 (6654) :939-942

[12] SrCu2O2:: A p-type conductive oxide with wide band gap [J].

Kudo, A ;

Yanagi, H ;

Hosono, H ;

Kawazoe, H .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :220-222

[13] REACTIONS OF LITHIUM AS A DONOR AND AN ACCEPTOR IN ZNO [J].

LANDER, JJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (3-4) :324-334

[14] P-type doping and devices based on ZnO [J].

Look, DC ;

Claftin, B .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03) :624-630

[15] HIGH-PRESSURE SOLUTION GROWTH OF GAN+ [J].

MADAR, R ;

JACOB, G ;

HALLAIS, J ;

FRUCHART, R .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :197-203

[16] Growth of p-type zinc oxide films by chemical vapor deposition [J].

Minegishi, K ;

Koiwai, Y ;

Kikuchi, Y ;

Yano, K ;

Kasuga, M ;

Shimizu, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11A) :L1453-L1455

[17] A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes [J].

Narushima, S ;

Mizoguchi, H ;

Shimizu, K ;

Ueda, K ;

Ohta, H ;

Hirano, M ;

Kamiya, T ;

Hosono, H .

ADVANCED MATERIALS, 2003, 15 (17) :1409-1413

[18] Preparation and characterization of nitrogen-incorporated SnO2 films [J].

Pan, S. S. ;

Ye, C. ;

Teng, X. M. ;

Fan, H. T. ;

Li, G. H. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 85 (01) :21-24

[19] P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

PARK, RM ;

TROFFER, MB ;

ROULEAU, CM ;

DEPUYDT, JM ;

HAASE, MA .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2127-2129

[20] Photochemical deposition of CuxS thin films from aqueous solutions [J].

Podder, J ;

Kobayashi, R ;

Ichimura, M .

THIN SOLID FILMS, 2005, 472 (1-2) :71-75

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