Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

被引：5

作者：

Papis-Polakowska, E. ^{[1
]}

Kaniewski, J. ^{[1
]}

Szade, J. ^{[2
]}

Rzodkiewicz, W. ^{[1
]}

Jasik, A. ^{[1
]}

Reginski, K. ^{[1
]}

Wawro, A. ^{[3
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Univ Silesia, A Chelkowski Inst Phys, PL-40007 Katowice, Poland

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

THIN SOLID FILMS | 2012年 / 522卷

关键词：

Superlattice; GaSb; Surface; Interface; X-ray photoelectron spectroscopy; INAS/GASB; GROWTH;

D O I：

10.1016/j.tsf.2012.09.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

There is a considerable interest in type-II GaSb/InAs superlattice system due to several modern applications including infrared detectors. In these studies X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE) have been used for extensive characterization of the surface and interface of GaSb/InAs superlattice. Application of XPS and SE techniques provides precise information from topmost layers of structure and allows excluding presence of GaAs-type interfaces in GaSb/InAs superlattices. It means that Sb-for-As anion exchange does not exist during the molecular beam epitaxial growth of superlattice structures. Simultaneously, these results indicate that InSb-type or GaInSb-type interfaces have been detected in the structures studied. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：223 / 227

页数：5

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