Thermoelectric Properties and Transport Mechanism of Pure and Bi-Doped SiNWs-Mg2Si

被引：5

作者：

Yang, Xiaomeng ^{[1
]}

Chen, Shaoping ^{[1
]}

Zhang, Hua ^{[1
]}

Lv, Feng ^{[1
]}

Fan, Wenhao ^{[2
]}

Wang, Wenxian ^{[1
]}

Munir, Zuhair A. ^{[3
]}

机构：

[1] Taiyuan Univ Technol, Coll Mat Sci & Engn, Taiyuan 030024, Shanxi, Peoples R China

[2] Taiyuan Univ Technol, Coll Phys & Optoelect, Taiyuan 030024, Shanxi, Peoples R China

[3] Univ Calif Davis, Dept Mat Sci & Engn, Davis, CA 95616 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 05期

基金：

美国国家科学基金会;

关键词：

energy filtering; Mg2Si; SiNWs; thermoelectric material; transport properties; SEEBECK COEFFICIENT; THERMAL-CONDUCTIVITY; SILICON NANOWIRES; FIGURE; MERIT; NANOCOMPOSITES; ENHANCEMENT; PERFORMANCE; COMPOSITES; PBTE;

D O I：

10.1002/pssa.201700742

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Through the use of nano-Si wires as additive, a significant improvement in the thermoelectric (TE) properties of Mg2Si is achieved. SiNWs-Mg2Si materials are prepared by a wet etching method followed by field activated pressure assisted synthesis (FAPAS). The results show that the presence of SiNWs successfully decouples the relationship between the electrical resistivity and the Seebeck coefficient of Mg2Si. The effect of doping with Bi is also investigated. The results show that the addition of Bi changed the scattering mechanism, and a zT value of 0.47 is determined at 800K for Mg2Si0.99Bi0.01-0.005SiNWs. The presence of MgO as an impurity and its effect on zT are discussed.

引用

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