Current-induced anisotropic memory effect in La5/8-yPryCa3/8MnO3 (y=0.43) thin film

被引：3
作者：
Liu, Yuan-Bo
Sun, Ji-Rong [1 ]
Shen, Bao-Gen
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 19期
基金：
中国国家自然科学基金;
关键词：
INSULATOR-METAL TRANSITION; COLOSSAL MAGNETORESISTANCE; ELECTRORESISTANCE; STATES;
D O I：
10.1063/1.4832459
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current-induced anisotropic memory effect in the La5/8-yPryCa3/8MnO3 (y = 0.43) film has been investigated. It is found that large electrical currents result in a dramatic reduction in film resistivity, and only slightly rebounds after the removal of the current, giving rise to a memory effect. Even more, the change of resistivity, measured under small current after removing processing current, is considerably faster along the direction parallel than perpendicular to processing current, yielding an anisotropic memory effect. According to the dielectrophoresis model, conduction filaments in the two directions could be different, and they may be easily formed along the processing current, thus the change of resistivity is different in the two directions. The anisotropic memory effect can be erased by either magnetizing the sample to fully magnetic state or heating the sample to higher temperatures. (C) 2013 AIP Publishing LLC.
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页数：5
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