Double-layer buffer template to grow commensurate epitaxial BaBiO3 thin films

被引：15

作者：

Lee, Han Gyeol ^{[1
,2
]}

Kim, Yoonkoo ^{[3
]}

Hwang, Sangwoon ^{[3
]}

Kim, Gideok ^{[1
,2
]}

Kang, Tae Dong ^{[1
,2
]}

Kim, Minu ^{[1
,2
]}

Kim, Miyoung ^{[3
]}

Noh, Tae Won ^{[1
,2
]}

机构：

[1] Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea

[3] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

来源：

APL MATERIALS | 2016年 / 4卷 / 12期

关键词：

PHASE-TRANSITIONS; OXIDE; SUPERCONDUCTIVITY; TEMPERATURE; BACEO3;

D O I：

10.1063/1.4972133

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We propose a BaCeO3/BaZrO3 double-layer buffer template, grown on a SrTiO3 substrate, for epitaxial growth of a target oxide film with large lattice constants of over 4.1 angstrom. Lattice mismatch from the substrate was mostly accommodated for by a BaZrO3 arbitrating layer. Having an ideal in-plane lattice structure, BaCeO3 served as the main-buffer to grow the target material. We demonstrated commensurate epitaxy of BaBiO3 (BBO, a = 4.371 angstrom) utilizing the new buffer template. Our results can be applied to heteroepitaxy and strain engineering of novel oxide materials of sizable lattice constants. (C) 2016 Author(s).

引用

页数：7

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