Electron Mobility in ZnMgO/ZnO Heterostructures in the Bloch-Gruneisen Regime

被引:7
|
作者
Li, Qun [1 ,2 ]
Zhang, Jingwen [1 ,2 ]
Chong, Jing [3 ]
Hou, Xun [1 ,2 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Key Lab Photon Technol Informat Shaanxi Prov, Key Lab Phys Elect & Devices,Minist Educ, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Xian 710049, Peoples R China
[3] China Satellite Maritime Tracking & Control Dept, Jiangyin 214431, Peoples R China
基金
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词
SCATTERING; RANGE; GAS; ZNO;
D O I
10.7567/APEX.6.121102
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependence of the electron mobility in ZnMgO/ZnO heterostructures in the Bloch-Gruneisen regime is studied and many-body effects are taken into account. For sufficiently low temperatures, the mobility limited by acoustic scattering follows a stronger, mu similar to T-alpha (alpha = 8.5 for the deformation-potential scattering, alpha = 6.5 for the piezoelectric scattering), temperature dependence, which is significantly different from the traditional mu similar to T-1 law. Many-body effects play an important role in the electron transport. The theoretical calculations are able to explain recently published experimental data. (C) 2013 The Japan Society of Applied Physics
引用
收藏
页数:3
相关论文
共 50 条
  • [41] Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility
    Lee, Do-Joong
    Kim, Ki-Ju
    Kim, Soo-Hyun
    Kwon, Jang-Yeon
    Xu, Jimmy
    Kim, Ki-Bum
    JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (31) : 4761 - 4769
  • [42] The Effect of Dislocation and Interface-Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure
    Liu, DongFeng
    ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2022, 2022
  • [43] Theoretical study of a two-dimensional electron gas in wurtzite ZnO/MgZnO heterostructures and comparison with experiment
    Seoung-Hwan Park
    Woo-Pyo Hong
    Jong-Jae Kim
    Doyeol Ahn
    Journal of the Korean Physical Society, 2015, 67 : 1844 - 1847
  • [44] Numerical and experimental analyses of two-dimensional electron mobility in AI(In,Ga)N/AIGaN heterostructures
    Miyoshi, Makoto
    Fujita, Shu
    Egawa, Takashi
    APPLIED PHYSICS EXPRESS, 2015, 8 (05)
  • [45] Theoretical study of a two-dimensional electron gas in wurtzite ZnO/MgZnO heterostructures and comparison with experiment
    Park, Seoung-Hwan
    Hong, Woo-Pyo
    Kim, Jong-Jae
    Ahn, Doyeol
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 67 (10) : 1844 - 1847
  • [46] Theoretical studies on the two-dimensional electron-gas properties of MgZnO/MgO/ZnO heterostructures
    Park, Seoung-Hwan
    Hong, Woo-Pyo
    Kim, Jong-Jae
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (01) : 96 - 98
  • [47] Theoretical studies on the two-dimensional electron-gas properties of MgZnO/MgO/ZnO heterostructures
    Seoung-Hwan Park
    Woo-Pyo Hong
    Jong-Jae Kim
    Journal of the Korean Physical Society, 2016, 69 : 96 - 98
  • [48] Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process
    Chin, Huai-An
    Cheng, I-Chun
    Huang, Chih-I
    Wu, Yuh-Renn
    Lu, Wen-Sen
    Lee, Wei-Li
    Chen, Jian Z.
    Chiu, Kuo-Chuang
    Lin, Tzer-Shen
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (05)
  • [49] Numerical optimization of two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures (0.10 < x < 0.30)
    Sarikavak-Lisesivdin, B.
    PHILOSOPHICAL MAGAZINE, 2013, 93 (09) : 1124 - 1131
  • [50] MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
    Broxtermann, D.
    Sivis, M.
    Malindretos, J.
    Rizzi, A.
    AIP ADVANCES, 2012, 2 (01):