New CMOS fully-differential transconductor and application to a fully-differential Gm-C filter

被引：27
作者：
Shaker, MO [1 ]
Mahmoud, SA
Soliman, AM
机构：
[1] Cairo Univ, Dept Elect & Commun, Cairo, Egypt
[2] Cairo Univ, Dept Elect Engn, Cairo, Egypt
来源：
ETRI JOURNAL | 2006年 / 28卷 / 02期
关键词：
CMOS transconductor; Gm-C filters;
D O I：
10.4218/etrij.06.0105.0173
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new CMOS voltage-controlled fully-differential transconductor is presented. The basic structure of the proposed transconductor is based on a four-MOS transistor cell operating in the triode or saturation region. It achieves a high linearity range of +/- I V at a 1.5 V supply voltage. The proposed transconductor is used to realize a new fully-differential Gm-C low-pass filter with a minimum number of transconductors and grounded capacitors. PSpice simulation results for the transconductor circuit and its filter application indicating the linearity range and verifying the analytical results using 035 mu m technology are also given.
引用
收藏
页码：175 / 181
页数：7
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