Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs

被引：26
作者：
Dutta, Gourab [1 ]
DasGupta, Nandita [1 ]
DasGupta, Amitava [1 ]
机构：
[1] IIT Madras, Dept Elect Engn, Microelect & MEMS Lab, Madras 60036, Tamil Nadu, India
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 12期
关键词：
Gallium nitride; gate dielectric; inductively coupled plasma chemical vapor deposition (ICP-CVD); interface charge; metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT); silicon nitride; CHEMICAL-VAPOR-DEPOSITION; LOW-LEAKAGE-CURRENT; THRESHOLD VOLTAGE; ALGAN/GAN MOSHEMT; PERFORMANCE; DENSITY; PASSIVATION; TRANSISTORS; THICKNESS; PLASMA;
D O I：
10.1109/TED.2016.2618421
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiNx deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) technique at low temperature (70 degrees C) was investigated as gate dielectric for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). Besides significant reduction in gate leakage current, the MIS-HEMTs showed improvement in drain current characteristics, 2DEG channel mobility, I-ON/I-OFF ratio, ON-resistance, and three terminal breakdown voltage as compared with reference HEMTs. Very small capacitance-voltage hysteresis (similar to 68 mV) was observed for a gate swing of -10 to + 5V. The effect of SiNx thickness (t(SiNx)) on the characteristics of MIS-HEMTs was studied. The performance of fabricated MIS-HEMTs was found to be stable for a wide range of temperature.
引用
收藏
页码：4693 / 4701
页数：9
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