Bridgman growth of Sr3NbGa3Si2O14 single crystal

被引：5

作者：

Wu, AH ^{[1
]}

Xu, JY ^{[1
]}

Lu, BL ^{[1
]}

Wu, XJ ^{[1
]}

Li, XH ^{[1
]}

Qian, GX ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2006年 / 41卷 / 04期

关键词：

electronic materials; crystal growth; X-ray diffraction; optical properties;

D O I：

10.1016/j.materresbull.2005.09.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new langasite structure piezoelectric single crystal Sr3NbGa3Si2O14 (SNGS) had been grown by the vertical Bridgman method for the first time. SNGS crystalline powder was synthesized as the starting material by sintering the mixture of 4N pure SrCO3, Nb2O5, SiO2 and Ga2O3 at 1200 degrees C for 16 h. < 001 >-oriented La3Ga5SiO14 (LGS) crystal of circle divide 10 nm x 35 mm was used as seed. A SNGS crystal with 25 mm in diameter and 40 mm in length has been grown from its stoichiometric melt. The transmittance spectra were measured and the transmittance of SNGS crystal was found to be greater than 80% in wavelength of 400-1000 nm. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：861 / 866

页数：6

共 17 条

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