Nucleation and growth of diamond film on porous silicon substrate

被引：3

作者：

Liao, Y ^{[1
]}

Fang, RC

Ye, F

Shao, QY

Wang, GZ

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China

[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 1999年 / 13卷 / 05期

关键词：

D O I：

10.1142/S0217984999000221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nucleation and growth of diamond film on porous silicon are investigated in a hot-filament chemical vapor deposition system. The characters of diamond film are determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy, A nucleation density of 3.6 x 10(7) cm(-2) is obtained. We find that almost air nuclei occur at the edge of the etched pores. The diamond film directly deposits on porous silicon substrate without the intermediate and no strains are found in the film.

引用

页码：159 / 165

页数：7

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