Theoretical study of polarization effect for AlGaN ultraviolet LEDs with different Al composition

被引：1
|
作者：
Gao, Lili [1 ]
机构：
[1] Beihua Univ, Coll Phys, Fengman 132013, Jilin, Peoples R China
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 07期
关键词：
AlGaN; Ultraviolet light; emitting diodes; Polarization field; Current transport; LIGHT-EMITTING-DIODES; EMISSION;
D O I：
10.1007/s11082-014-0061-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The AlGaN-based ultraviolet light-emitting diodes (UV LEDs) with different Al composition in the multiple quantum well (MQW) active region are investigated numerically. It is manifest that the Al content significantly affects the polarization field in the MQWs, which further have great impact on the current transport mechanisms for different type UV LEDs. The energy band diagrams and electric field in MQWs are simulated to illustrate the devices' performance theoretically.
引用
收藏
页码：1941 / 1948
页数：8
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