InAlAs APD with high multiplied responsivity-bandwidth product (MR-bandwidth product) of 168 A/W.GHz for 25 Gbit/s high-speed operations

被引：29

作者：

Nada, M. ^{[1
]}

Muramoto, Y. ^{[1
]}

Yokoyama, H. ^{[1
]}

Ishibashi, T. ^{[1
]}

Kodama, S. ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2012年 / 48卷 / 07期

关键词：

GUIDE AVALANCHE PHOTODIODE; GHZ;

D O I：

10.1049/el.2012.0100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InAlAs avalanche photodiode (APD) that has large bandwidth (> 18.5 GHz) and high multiplied responsivity is demonstrated. The APD has a vertically illuminated structure with a thick absorption layer of 1 mu m. The fabricated APD achieves the maximum 3 dB bandwidth of 23 GHz at the multiplied responsivity of 4.06 A/W and the 3 dB bandwidth of 18.5 GHz at high multiplied responsivity of 9.1 A/W. The multiplied responsivity-bandwidth product 18.5 x 9.1 = 168 A/W. GHz is the largest value ever reported for an APD for 25 Gbit/s operations.

引用

页码：397 / U137

页数：2

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