Multivalent cation rechargeable batteries are expected to perform well as high-capacity storage devices. Rechargeable magnesium batteries have an advantage in terms of resource utilization and safety. Here, we report on sulfur-doped vanadium pentoxide (S-V2O5) as a potential material for the cathodes of such a battery; S-V2O5 showed a specific capacity of 300 mAh.g(-1)center dot S-V2O5 was prepared by a method using a low-temperature plasma generated by carbon felt and a 2.45 GHz microwave generator. This study investigates the ability of S-V2O5 to achieve high capacity when added to metal oxide. The highest recorded capacity (420 mAh.g(-1)) was reached with MnO2 added to composite SMn-V2O5, which has a higher proportion of included sulfur than found in S-V2O5. Results from transmission electron microscopy, energy-dispersive X-ray spectroscopy, Micro-Raman spectroscopy, and X-ray photoelectron spectroscopy show that the bulk of the SMn-V2O5 was the orthorhombic V2O5 structure; the surface was a xerogel-like V2O5 and a solid solution of MnO2 and sulfur.
机构:City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
Zhang, X.
Li, D.
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机构:City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
Li, D.
Ruan, Q.
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机构:City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
Ruan, Q.
Liu, L.
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机构:City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
Liu, L.
Wang, B.
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机构:City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
Wang, B.
Xiong, F.
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City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
Xiong, F.
Huang, C.
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City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
Huang, C.
Chu, P. K.
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City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
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East China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
Zhang, Yajuan
Yuan, Xiaoyan
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Shaanxi Univ Sci & Technol, Sch Mat Sci & Engn, Xian 710021, Peoples R ChinaEast China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
Yuan, Xiaoyan
Lu, Ting
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East China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
Lu, Ting
Gong, Zhiwei
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East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
Gong, Zhiwei
Pan, Likun
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East China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
Pan, Likun
Guo, Shouwu
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Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Dept Elect Engn, Shanghai 200240, Peoples R ChinaEast China Normal Univ, Shanghai Key Lab Magnet Resonance, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China