Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives

被引：10

作者：

Chen, Yu ^{[1
]}

Fan, S. W. ^{[1
]}

Xu, P. ^{[1
]}

机构：

[1] China Three Gorges Univ, Hubei Engn Res Ctr Weak Magneticfield Detect, Dept Phys, Yichang 443002, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2022年 / 121卷 / 25期

关键词：

TRANSPARENT; DESIGN; FILMS;

D O I：

10.1063/5.0125543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Due to the absence of high-performance ambipolar wide-bandgap (WBG) semiconductors, the realization of active transparent photoelectronic devices is precluded. Herein, based on the hybrid functional calculations, we predict that, in a wide-bandgap semiconductor strontium sulfide (SrS), the Br (Rb) substituting S (Sr) is an ideal n (p)-type defect. SrBr2 and Rb2S are promising dopant sources for introducing Br and Rb, respectively. Moreover, the Sr-rich (Sr-poor) condition is the optimum growth environment to fabricate the Br-S (Rb-Sr) defects. Thermodynamic equilibrium simulations indicate that the concentration of Br-S and Rb-Sr can exceed 4 x 10(19) cm(-3) at high growth temperatures. After rapid quenching from the growth temperature to room temperature, the free carrier densities can reach 1.56 x 10(19) cm(-3) for electrons and 1.02 x 10(18) cm(-3) for holes. These results show SrS is a promising ambipolar WBG semiconductor that has huge potential applications in future optoelectronic devices. Published under an exclusive license by AIP Publishing.

引用

页数：6

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