Ultralow Contact Resistance at an Epitaxial Metal/Oxide Heterojunction Through Interstitial Site Doping

被引：28

作者：

Chambers, Scott A. ^{[1
]}

Gu, Meng ^{[2
]}

Sushko, Peter V. ^{[4
,5
]}

Yang, Hao ^{[3
]}

Wang, Chongmin ^{[2
]}

Browning, Nigel D. ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Fundamental & Computat Sci Directorate, Richland, WA 99352 USA

[2] Pacific NW Natl Lab, Environm Mol Sci Lab, Richland, WA 99352 USA

[3] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

[4] UCL, Dept Phys & Astron, London WC1E 6BT, England

[5] UCL, London Ctr Nanotechnol, London WC1E 6BT, England

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 29期

基金：

英国工程与自然科学研究理事会;

关键词：

metal; oxide interfaces; ohmic contacts; scanning transmission electron microscopy; x-ray and ultraviolet photoemission; first-principles modeling; CR CLUSTERS; SRTIO3; GROWTH; FILMS; OXIDE;

D O I：

10.1002/adma.201301030

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Heteroepitaxial growth of Cr metal on Nb-doped SrTiO3(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4001 / 4005

页数：5

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