Doping of epitaxial layers and heterostructures based on HgCdTe

被引：27
作者：
Mynbaev, K. D. [1 ]
Ivanov-Omskii, V. I. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2006年 / 40卷 / 01期
关键词：
D O I：
10.1134/S1063782606010015
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Available publications concerned with doping of epitaxial layers of HgCdTe alloys and heterostructures based on these alloys are reviewed. The main changes in technology of HgCdTe doping, which occurred when device structures fabricated on the basis of bulk material were replaced by those based on epitaxial layers are analyzed. The specific features of the doping of HoCdTe epitaxial layers in the course of the growth of these layers by the liquid-phase epitaxy, metal-organic chemical vapor deposition, and molecular-beam epitaxy are considered. The electrical properties of the doped material are analyzed. The current concepts of the intrinsic defects in HgCdTe and the effect of these defects on the properties of HgCdTe are briefly considered.
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页码：1 / 21
页数：21
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