Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

被引：11

作者：

Tan, Chun Chia ^{[1
,2
]}

Shi, Luping ^{[3
]}

Zhao, Rong ^{[4
]}

Guo, Qiang ^{[5
]}

Li, Yi ^{[6
]}

Yang, Yi ^{[1
]}

Chong, Tow Chong ^{[4
]}

Malen, Jonathan A. ^{[7
]}

Ong, Wee-Liat ^{[7
]}

Schlesinger, Tuviah E. ^{[2
]}

Bain, James A. ^{[2
]}

机构：

[1] ASTAR, Data Storage Inst, Singapore 117608, Singapore

[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[3] Tsinghua Univ, Dept Precis Instrument, Opt Memory Natl Engn Res Ctr, Beijing 100084, Peoples R China

[4] Singapore Univ Technol & Design, Singapore 138682, Singapore

[5] Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China

[6] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore

[7] Carnegie Mellon Univ, Dept Mech Engn, Pittsburgh, PA 15213 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 13期

关键词：

THIN-FILMS; GE2SB2TE5;

D O I：

10.1063/1.4823551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low current and high endurance Phase Change Random Access Memory (PCRAM). N-GST/GST SLL PCRAM devices demonstrated similar to 37% current reduction compared to single layered GST PCRAM and significantly higher write/erase endurances of similar to 10(8) compared to similar to 10(6) for GeTe/Sb2Te3 SLL devices. The improvements in endurance are attributed to the compositionally matched N-GST/GST material combination that lowers the diffusion gradient between the layers and the lower crystallization-induced stress in the SLL as revealed by micro-cantilever stress measurements. (C) 2013 AIP Publishing LLC.

引用

页数：5