Electronic structure and band alignment of Blue Phosphorene/Janus ZrSSe heterostructure: A first principles study

被引:7
作者
Nguyen, Chuong, V [1 ]
Vi, Vo T. T. [2 ]
Phuong, Le T. T. [2 ]
Hoi, Bui D. [2 ]
Hoa, Le T. [3 ,4 ]
Hieu, Nguyen N. [3 ,4 ]
Phuc, Huynh, V [5 ]
Khang, Pham D. [6 ,7 ]
机构
[1] Le Quy Don Tech Univ, Dept Mat Sci & Engn, Hanoi, Vietnam
[2] Hue Univ, Univ Educ, Dept Phys, Hue, Vietnam
[3] Duy Tan Univ, Inst Res & Dev, Da Nang 550000, Vietnam
[4] Duy Tan Univ, Fac Nat Sci, Da Nang 550000, Vietnam
[5] Dong Thap Univ, Div Theoret Phys, Dong Thap, Vietnam
[6] Ton Duc Thang Univ, Adv Inst Mat Sci, Lab Appl Phys, Ho Chi Minh City, Vietnam
[7] Ton Duc Thang Univ, Fac Appl Sci, Ho Chi Minh City, Vietnam
关键词
Blue Phosphorene; Janus ZrSSe; DFT calculations; van der Waals heterostructures; Band alignment; GRAPHITIC CARBON NITRIDE; HEXAGONAL BORON-NITRIDE; 2-DIMENSIONAL MATERIALS; FLEXIBLE ANODES; METAL; GRAPHENE; MOS2; MONOLAYER; OPTOELECTRONICS; PHOTOCATALYST;
D O I
10.1016/j.physe.2020.114369
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, we construct the BlueP/ZrSSe heterostructure and explore systematically its electronic characteristics and interface features in the framework of first principles calculations. The stacking and electric field effects on the interface characters of BlueP/ZrSSe heterostructure are also considered. We find that the BlueP layer interacts with Janus ZrSSe layer via the weak van der Waals forces, which keeps the BlueP/ZrSSe heterostructure feasible. Both the BlueP/SZrSe and BlueP/SeZrS heterostructures possess indirect semiconductor and exhibits type-I band alignment. Furthermore, electric field can tune the band alignment and switch the BlueP/ZrSSe heterostructure from semiconductor to metal. These findings could provide a helpful guidance for using BlueP/ZrSSe heterostructure in practical applications of nanoelectronics and optoelectronics.
引用
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页数:7
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