Design and Characterization of Polarization-Reversed AlInGaN Based Ultraviolet Light-Emitting Diode

The effect of using polarization-reversed AlInGaN-based quantum well active region in ultraviolet light-emitting diode is numerically investigated. By employing Al0.54In0.26Ga0.20N and Al0.83In0.17N as barrier and electron blocking layers, which ably reverse the direction of the polarization in Al0.005In0.02Ga0.975N quantum well and provide sufficient potential barrier height to confine electrons in the conduction band, simulation results show that the energy band profile of the Al0.005In0.02Ga0.975N quantum well is tilted up, resulting in better carrier confinement and more uniform distribution of carriers in the quantum well. Moreover, the overlap between electron and hole wave functions is increased and the Auger recombination is suppressed effectively, which in turn improves the radiative recombination efficiency.