Formation of β-SiC nanorods with amorphous SiO2 wrapping layers

被引:22
|
作者
Meng, GW [1 ]
Zhang, LD
Qin, Y
Feng, SP
Mo, CM
Li, HJ
Zhang, SY
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Mat Sci & Engn, Anhua 230026, Peoples R China
[3] Northwestern Polytech Univ, Mat Sci & Engn Coll, Xian 710072, Shaanxi, Peoples R China
[4] Univ Sci & Technol China, Struct Res Lab, Anhua 230026, Peoples R China
关键词
D O I
10.1023/A:1006664000217
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Large quantities of β-SiC nanorods wrapped with amorphous SiO2 layers were prepared. The formation of the nanorods was based on carbothermal reduction of silica xerogels with carbon nanoparticles embedded in the network, and the formation of SiO2 layer was from the reaction of decomposed SiO and O2. An X-ray diffraction (XRD) pattern of the as-prepared composite showed several small peaks assigned to β-SiC, and a background halo pattern characteristic of an amorphous SiO phase.
引用
收藏
页码:1255 / 1257
页数:3
相关论文
共 50 条
  • [41] Effect of gas atmosphere on the formation of silicon by reaction of SiC and SiO2
    Li, Xiang
    Zhang, Guangqing
    Ostrovski, Oleg
    Tronstad, Ragnar
    JOURNAL OF MATERIALS SCIENCE, 2016, 51 (02) : 876 - 884
  • [42] Effect of gas atmosphere on the formation of silicon by reaction of SiC and SiO2
    Xiang Li
    Guangqing Zhang
    Oleg Ostrovski
    Ragnar Tronstad
    Journal of Materials Science, 2016, 51 : 876 - 884
  • [43] Formation of magnetic nanoclusters in Fe implanted amorphous and crystalline SiO2
    Bharuth-Ram K.
    Ronning C.
    Hofsäss H.
    Interactions, 2024, 245 (01)
  • [44] Role of first SiO2 layer in a multilayer SiO2/ZrO2/SiO2 fiber coating for SiC/SiC ceramic composites
    Lee, JI
    Li, H
    Libera, M
    Lee, WY
    Wang, H
    Morscher, GN
    ADVANCES IN CERAMIC MATRIX COMPOSITES VI, 2001, 124 : 15 - 26
  • [45] Electronegativity and point defect formation in the ion implanted SiO2 layers
    Prucnal, S.
    Sun, J. M.
    Reuther, H.
    Buchal, C.
    Zuk, J.
    Skorupa, W.
    VACUUM, 2007, 81 (10) : 1296 - 1300
  • [46] OPTIMIZATION OF IMPLANTATION CONDITIONS FOR THE FORMATION OF BURIED SIO2 LAYERS IN SILICON
    MOSSADEQ, H
    BENNETT, RJ
    ANAND, KV
    ELECTRONICS LETTERS, 1982, 18 (05) : 215 - 216
  • [47] Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures
    McDonald, K
    Huang, MB
    Weller, RA
    Feldman, LC
    Williams, JR
    Stedile, FC
    Baumvol, IJR
    Radtke, C
    APPLIED PHYSICS LETTERS, 2000, 76 (05) : 568 - 570
  • [48] Comparison of nitrogen incorporation of SiO2/SiC and SiO2/Si structures
    McDonald, K.
    Huang, M.B.
    Weller, R.A.
    Feldman, L.C.
    Williams, J.R.
    Stedile, F.C.
    Baumvol, I.J.R.
    Radtke, C.
    Applied Physics Letters, 2000, 76 (05)
  • [49] Si/SiO2 and SiC/SiO2 interfaces for MOSFETs -: Challenges and advances
    Pantelides, Sokrates T.
    Wang, Sanwu
    Franceschetti, A.
    Buczko, R.
    Di Ventra, M.
    Rashkeev, S. N.
    Tsetseris, L.
    Evans, M. H.
    Batyrev, I. G.
    Feldman, L. C.
    Dhar, S.
    McDonald, K.
    Weller, R. A.
    Schrimpf, R. D.
    Fleetwood, D. M.
    Zhou, X. J.
    Williams, J. R.
    Tin, C. C.
    Chung, G. Y.
    Isaacs-Smith, T.
    Wang, S. R.
    Pennycook, S. J.
    Duscher, G.
    van Benthem, K.
    Porter, L. M.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 935 - 948
  • [50] SiO2 as an insulator for SiC devices
    Harris, CI
    Afanas'ev, VV
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 167 - 174